semiconductor LL101A thur ll101c small signal schottky diodes features mechanical data absolute ratings(limiting values) electrical characteristics for general purpose applications the ll101 series is a metal-on-silicon junction schottky barrier device which is protected by a pn junction guard ring. the low forward voltage drop and fast switching make it ideal for protection of mos devices, steering, biasing, and coupling diodes for fast switching and low logic level these diodes are also available in the do-35 case with the type designation sd101a to sd101c ,in the sod-123 case type with the type sd101aw to sd101cw and applications designation in the sod-323 case type with the type designation sd101aws to sd101cws,in the micro-melf case with type designation mcl101 to mcl103 reverse breakover voltage at i =10 a r leakage current at v =50v r v =40v v =30v r r forward voltage drop at i =1ma f (ratings at 25 c ambient temperature unless otherwise specified) 200 200 200 2.0 2.1 2.2 0.41 0.4 0.39 1 1 0.95 0.9 i =15ma f reverse recovery time at i =i =5ma,recover to 0.1 r fr i junction capacitance at v =0v ,f=1mhz r v rrm vrrm v rrm vrrm v rrm vrrm mw a v v t stg p tot t j power dissipation (infinite heat sink) peak reverse voltage storage temperature range junction temperature maximum single cycle surge 10 s square wave LL101A LL101A LL101A LL101A LL101A LL101A ll101b ll101b ll101b ll101b ll101b ll101b ll101c ll101c ll101c ll101c ll101c ll101c -55 to+150 c c v v v v v v v v v na na na pf pf pf ns i fsm v f v f v f v f v f v f i r i r i r c j c j c j t rr 125 2.0 400 1) 60 60 50 50 40 40 1) valid provided that electrodes are kept at ambient temperature case weight : : mini-melf glass case(sod-80 ) approx. 0.05 gram mini-melf dimensions in inches and (millimeters) symbols units value min. typ. max. unis symbols jinan jingheng co., ltd. no.51 heping road pr china tel:86-531-6943657 fax:86-531-6947096 www.jifusemicon.com small signal chottky diodes 2-37 jf
ratings and characteristic curves LL101A thr ll101c u figure 1. typical variation of forward. current vs.fwd. voltage for primary conduction through the schottky barrier figure 2. typical forward conduction curve of schottky barrier and pn junction combination guard ring figure 4. typical capacitance curve as a function of reverse voltage ma ma ma v f v r v r v f i f i r i r i f a b c a a b b c c ma figure 3.typical variation of reverse current at versus temperature jinan jingheng co., ltd. no.51 heping road pr china tel:86-531-6943657 fax:86-531-6947096 www.jifusemicon.com small signal chottky diodes 2-38
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